19D061MHMN - Heterostructured microelectronic devices modeling
| Course specification | ||||
|---|---|---|---|---|
| Course title | Heterostructured microelectronic devices modeling | |||
| Acronym | 19D061MHMN | |||
| Study programme | Electrical Engineering and Computing | |||
| Module | Nanoelectronics and Photonics | |||
| Type of study | doctoral studies | |||
| Lecturer (for classes) |
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| Lecturer/Associate (for practice) | ||||
| Lecturer/Associate (for OTC) | ||||
| ESPB | 9.0 | Status | elective | |
| Condition | no | |||
| The goal | Students learn how to make a real semiconductor in mathematical and physical models. Through analysis and simulation models they realize relevant parameters affecting the functioning of the device and how to get to the optimal design (solution) of existing and potentially new. heterostructural devices. | |||
| The outcome | Students will learn how to make a real semiconductor in mathematical and physical models. | |||
| Contents | ||||
| URL to the subject page | https://www.etf.bg.ac.rs/fis/karton_predmeta/19D061MHMN-2020 | |||
| Contents of lectures | Types of models. The role, significance and history of microelectronic devices modeling. Electronic transport processes. Models of heterostructure unipolar transistors. Modeling heterostructure bipolar transistor (HBT). HBT's based on AlGaAs / GaAs and InGaAs/ GaAs. HBT models including thermal effects. Models of hot electron transistors. | |||
| Contents of exercises | no | |||
| Literature | ||||
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| Number of hours per week during the semester/trimester/year | ||||
| Lectures | Exercises | OTC | Study and Research | Other classes |
| 8 | ||||
| Methods of teaching | lectures | |||
| Knowledge score (maximum points 100) | ||||
| Pre obligations | Points | Final exam | Points | |
| Activites during lectures | Test paper | 70 | ||
| Practical lessons | Oral examination | |||
| Projects | ||||
| Colloquia | ||||
| Seminars | 30 | |||

