13E064NAN - Nanoelectronic devices
|Electrical Engineering and Computing
|Type of study
|bachelor academic studies
|Lecturer (for classes)
|Lecturer/Associate (for practice)
|Lecturer/Associate (for OTC)
|Introducing students to fabrication, physics of operation, and properties of nanoelectronic devices. Students will gain knowledge in the field of transport in nanostructures and nanodevices, physics of graphene and other twodimensional materials, carbon nanotubes, and nanodevices based on these materials.
|Students should learn methods of electronic structure and electron transport theories. They should also develop practical skills to model nanostructures, graphene and other two-dimensional materials, nanotubes, and nanoelectronic devices.
|URL to the subject page
|URL to lectures
|Contents of lectures
|Tight binding method. Landauer formula. Landauer-Büttiker formalism. Non-equilibrium Green’s function (NEGF) method. Quantum point contact. Coulomb blockade. Single-electron transistor. Electronic structure and transport properties of of graphene and carbon nanotubes. Graphene transistors. Carbon nanotube diodes and transistors. Quantum interference devices. Applications of numerical methods.
|Contents of exercises
|Solving selected problems. Modeling of a specific nanostructure or a nanodevice which includes writing a computer program.
|Number of hours per week during the semester/trimester/year
|Study and Research
|Methods of teaching
|lectures, problem-solving classes, demonstrations
|Knowledge score (maximum points 100)
|Activites during lectures